形成宽禁带无序结构GaInP.pdfVIP

JOURNAL OF APPLIED PHYSICS 106, 063525 2009 CuPt ordering in high bandgap Ga In P alloys on relaxed GaAsP step x 1−x grades M. A. Steiner,1,a L. Bhusal,1 J. F. Geisz,1 A. G. Norman,1 M. J. Romero,1 W. J. Olavarria,1 2 1 Y. Zhang, and A. Mascarenhas 1 National Renewable Energy Laboratory, Golden, Colorado 80401, USA 2 Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA Received 6 July 2009; accepted 5 August 2009; published online 24 September 2009 We have fabricated a series of GaxIn1−xP samples over the compositional range 0.51 x 0.76 on GaAs substrates. The samples were prepared by first growing a thick step-graded layer of GaAs1−yPy to bridge the lattice misfit between the Ga In P layers and the GaAs substrate. The order parameter x 1−x was tuned using a dilute antimony surfactant during growth. The composition, strain, and order parameter of each sample were characterized by x-ray diffraction, and the bandgap was measured by photoluminescence. We find good agreement between the experimentally measured bandgaps and theoretically modeled curves. © 2009 American Institute of Physics. doi: 10.1063/1.3213376 I. INTRODUCTION disorder the alloy and raise the bandgap. They also showed