nand与nor flash的原理与异同（The principle and the differences between NAND and NOR Flash）.docVIP

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nand与nor flash的原理与异同（The principle and the differences between NAND and NOR Flash）.doc

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nand与nor flash的原理与异同（The principle and the differences between NAND and NOR Flash）

nand与nor flash的原理与异同（The principle and the differences between NAND and NOR Flash） The principles and similarities and differences between NAND and NOR FLASH! First, the principle of data storage Two kinds of flash memory are three terminal devices as a storage unit, respectively, the source, drain and gate, and the same principle of FET, mainly to control between the source and drain electrodes on-off using electric field effect, the gate current consumption is small, the difference is FET single the gate structure, and FLASH is a double gate structure between the gate electrode and the silicon substrate has a floating gate. [attach]158 [/attach] The floating gate is composed of nitride sandwiched between two layers of silicon dioxide material, and the intermediate nitride is a charge potential trap that can store the charge. The thickness of the upper and lower two layers of oxide is greater than 50 to avoid breakdown. Two. Heavy discharge of floating gate Is to charge trap charge injection process data is written to the data process unit, write data of two kinds of technology, hot electron injection (hot electron injection) and F-N (Fowler Nordheim tunneling) tunnel effect, the former is a source for the floating gate charge, after a silicon base layer to the floating charge through the gate. The NOR type FLASH charges the floating gate via hot electron injection, while the NAND charges the floating gate via the F-N tunneling effect. Before writing new data, you must erase the original data, which is different from the hard disk, that is, the charge of the floating gate is released, and the two FLASH are discharged through the F-N tunneling effect. Three, 0 and 1 In this respect, the two FLASH inject the charge into the floating gate to indicate that the0is written. No charge is injected to indicate the1, so the data to the FLASH is written 1, which is just the opposite of the hard disk; The charge in the floating gate unit, the induction of the floating gate, so