具有高温工作能力的1700v spt igbt和二极管芯片组（Has high ability to work 1700V SPT IGBT and diode chip group）.docVIP

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具有高温工作能力的1700v spt igbt和二极管芯片组（Has high ability to work 1700V SPT IGBT and diode chip group）.doc

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具有高温工作能力的1700v spt igbt和二极管芯片组（Has high ability to work 1700V SPT IGBT and diode chip group）

具有高温工作能力的1700v spt igbt和二极管芯片组（Has high ability to work 1700V SPT IGBT and diode chip group） I carefully collated documents, documents from the network I only collect and sort out In case of error Please check it yourself! 1700V, SPT+, IGBT and diode chip sets with high temperature operation capability 1700V, SPT+IGBT, and, Diode, Chip, Set, with, High,, Temperature, Operation, Capability Li Cheng Wu Zhou Donghai translates the school of holly Translated, by, Wu, Licheng, Zhou, Donghai, Proofread by Hu Dongqing Abstract: This paper introduces a newly developed 1700V, IGBT, and diode chip sets with optimized high temperature operation capability Due to the introduction of new terminal concepts and silicon design Improved ABBs latest generation of flat gate 1700V IGBT (SPT+) performance The introduction of a local proton lifetime control layer The leakage current of diode has been reduced remarkably at 150 C It also retains the same electrical characteristics as the previous SPT (soft feedthrough) diode process platform All of the above characteristics are expected to make it possible to develop 1700V modules with rated values of 3600A and operating temperature ranging from -40 to 150 DEG C This module will have low loss and high safe operating area (SOA) Development of working temperature direction higher than 175 Will be introduced later Key words: chip set, high temperature, low loss, high safety zone Abatract: This paper introduces a new 1700V SPT+IGBT and Diode Chip Set with High Temperature Operation Capability. Thanks to the introduction of new terminal concept and silicon design, the performance of the new-generation Panar cascade by ABB company has been improved. By the introduction of partial proton duration control layer, the leakage current of diode under been lessened has 150 degrees. While in the meantime, the elctric features of the previous SPT diode technological platform still remain. All the features make it possible for the research of 1700V modul