温度和掺杂浓度对delta掺杂GaAs量子阱电子态结构和子带间光学.PDF

第37卷第4期 南京师大学报(自然科学版) Vol.37 No.4 2014年12月 JOURNAL OF NANJING NORMAL UNIVERSITY(Natural Science Edition) Dec,2014 詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨詨 温度和掺杂浓度对 delta掺杂 GaAs量子阱 电子态结构和子带间光学吸收的影响 赵恒飞,杨双波 (南京师范大学物理科学与技术学院,南京210023) [摘要]摇 在有效质量近似下,通过自洽计算求解薛定谔方程和泊松方程,得到了温度不为零时Si啄掺杂的GaAs 量子阱系统的电子态结构.研究了温度和掺杂浓度对系统子带能量、费米能级、电子密度分布和子带间光学吸收 系数的影响.发现在一定的掺杂浓度下,费米能级会随着温度的升高而降低,子带间入射光总的吸收系数随温度 升高而降低;在温度一定时,费米能级和子带能级随掺杂浓度的增大而增大,子带间入射光总吸收系数随掺杂浓 度增大而增大. [关键词]摇 GaAs量子阱,入射光吸收系数,温度,掺杂浓度,电子态结构 [中图分类号]O413.1摇 [文献标志码]A摇 [文章编号]1001-4616(2014)04-0051-08 Effect of Temperature and Doping Concentration on Structure of Electronic State and Intersubband Optical Absorption of Si Delta鄄Doped GaAs Quantum Well Zhao Hengfei,Yang Shuangbo (School of Physics and Technology,Nanjing Normal University,Nanjing210023,China) Abstract:By solvingSchr觟dingerequationandPoissonequationself鄄consistentlyundertheeffectivemassapproximation, we calculatedthestructureoftheelectronicstateof Si啄鄄dopedGaAsquantumwell systemat T屹0.Westudiedtheeffect of temperature,dopingconcentration,andenergy of incidentlight ontheintersubbandenergy,Fermienergy,electroncon鄄 centration distribution and intersubband optical absorption coefficient.It isfound that at the given doping concentration, the Fermi energy decreasewith the increase of temperature,thetotal intersubband optical absorption coefficient decrease with the increase of temperature. And at the given temperature,the total intersubband optical absorption coefficient increasewith the increase of doping concentration. Key words:GaAs quantum well,intersubband optical absorption,temperature,doping concentrat