bjt等效电路模型的发展-researchgate.pdfVIP

See discussions, stats, and author profiles for this publication at: /publication/265336736 Advanced Compact Models for BJT Article · June 2 1 CITATIONS READS 149 1 author: Deyuan Xiao Shanghai Institute of Microsystem And Information Technology 18 PUBLICATIONS 45 CITATIONS SEE PROFILE All content following this page was uploaded by Deyuan Xiao on 5 September 2 14. The user has requested enhancement of the downloaded file. 33 3 V o.l 33 No. 3 2010 6 Chinese Journal o f E lectron Dev ices Jun. 20 10 * Advanced CompactModels for BJT * L UO J iex in, CHEN J ing, W U Q ingqing, X IA O D eyuan, WAN G X i S ta te K ey L aboratory o Functiona lM a terials or In orm at ics, Shang ha i Institute o M icrosystem and In orma tion Technology, Ch in eseA cad em y o S ciences, Shangha i 200050, China Abstract: The com binat ion o f decreasing BJT d mi ensions and increasing u se of BJT for high speed and R F applica t ion has created the need for advanced compact mode ls for B JT circuit design. W e prov ide an overv iew of the basic physics that mu st be m ode led to build a compactm ode l for the BJT and describe the approaches taken by the devel opers who advanced several m ode ls. T he characteristics of the m odels are dem onstrated by w ay of com parison o f smi ulated and m easured dev ice data. In detail, w e w ill consider the fo llow ing mi po rt