a very robust algangan hemt technology to high forward gate bias and current一个非常健壮的algangan hemt技术高向前门偏差和电流.pdfVIP

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a very robust algangan hemt technology to high forward gate bias and current一个非常健壮的algangan hemt技术高向前门偏差和电流.pdf

a very robust algangan hemt technology to high forward gate bias and current一个非常健壮的algangan hemt技术高向前门偏差和电流

Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2012, Article ID 493239, 4 pages doi:10.1155/2012/493239 Research Article A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current Bradley D. Christiansen,1 Eric R. Heller,2 Ronald A. Coutu Jr.,1 Ramakrishna Vetury,3 and Jeffrey B. Shealy3 1 Department of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USA 2 Materials and Manufacturing Directorate, Air Force Re

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