asymmetry of polarization reversal and current-voltage characteristics of ptpzt-filmpttisio2si-substrate structures不对称的极化反转电流电压特性ptpzt-filmpttisio2si-substrate结构.pdfVIP

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asymmetry of polarization reversal and current-voltage characteristics of ptpzt-filmpttisio2si-substrate structures不对称的极化反转电流电压特性ptpzt-filmpttisio2si-substrate结构.pdf

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asymmetry of polarization reversal and current-voltage characteristics of ptpzt-filmpttisio2si-substrate structures不对称的极化反转电流电压特性ptpzt-filmpttisio2si-substrate结构

Hindawi Publishing Corporation Smart Materials Research Volume 2011, Article ID 374915, 5 pages doi:10.1155/2011/374915 Research Article Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures S. L. Bravina,1 N. V. Morozovsky,1 J. Costecalde,2 C. Soyer,2 D. Remiens,2 and D. Deresmes2 1 Institute of Physics, NASU 46, Prospect Nauki, 03680 Kyiv, Ukraine 2 IEMN-DOAE-MIMM Team, CNRS, UMR 8520, Bat. P3, Cite Scientiﬁque USTL, 59652 Villeneuve d’Ascq, France ´ Correspondence should be addressed to S. L. Bravina, bravmorozo@ Received 8 November 2011; Revised 19 December 2011; Accepted 22 December 2011 Academic Editor: David Vokoun Copyright © 2011 S. L. Bravina et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-ﬁlm/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed by piezoresponse force microscopy. The comparison of the dependences of introduced asymmetry factors for the bipolar charge-voltage and current-voltage loops and unipolar current-voltage curves on drive voltage indicates the interconnection of ferroelectric and electrical space charge transfer asymmetries. 1. Introduction method. The bottom Pt electrode of 150 nm of thickness with