room temperature direct band gap emission from ge p-i-n heterojunction photodiodes室温直接带隙发射从通用电气p i n异质结二极管.pdfVIP

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room temperature direct band gap emission from ge p-i-n heterojunction photodiodes室温直接带隙发射从通用电气p i n异质结二极管.pdf

room temperature direct band gap emission from ge p-i-n heterojunction photodiodes室温直接带隙发射从通用电气p i n异质结二极管

Hindawi Publishing Corporation Advances in OptoElectronics Volume 2012, Article ID 916275, 4 pages doi:10.1155/2012/916275 Research Article Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes E. Kasper,1 M. Oehme,1 T. Arguirov,2, 3 J. Werner,1 M. Kittler,2, 3 and J. Schulze1 1 Institut fur Halbleitertechnik (IHT), University of Stuttgart, 70659 Stuttgart, Germany ¨ 2 Leibniz-Institut fur Innovative Mikroelektronik (IHP), 15236 Frankfurt (Oder), Germany ¨

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