双向可控硅应用（Bidirectional thyristor application）.doc

双向可控硅应用（Bidirectional thyristor application） Bidirectional thyristor application For the normal use of bidirectional thyristor, it is necessary to master its main parameters quantitatively, make proper selection of bidirectional thyristor and take corresponding measures to meet the requirements of each parameter. Selection of voltage levels: usually the smaller values of the VDRM (repetitive peak voltage) and VRRM (reverse repetitive peak voltage) are applied to the rated voltage of the device. When selecting, the rated voltage shall be 2~3 times of the peak voltage of the normal operation, as the allowable operating overvoltage margin. Current determination: since triac is commonly used in AC circuits, the average value is not used to indicate its current rating. Since the overload capacity of thyristor is smaller than that of general electromagnetic device, the current value of SCR used in general home appliance is 2~3 times of the actual work current value. Meanwhile, the peak current of thyristor under repetitive peak voltage VDRM and reverse repetitive peak voltage VRRM shall be less than the IDRM and IRRM specified in the device. The on state (peak) voltage VTM is selected: it is a thyristor controlled transient peak voltage drop at specified multiple current ratings. In order to reduce the heat loss of thyristor, the small silicon controlled by VTM should be chosen as much as possible. Maintain current: IH is the minimum primary current required to maintain the conduction state of the thyristor. It is related to junction temperature. The higher the junction temperature, the smaller the IH. Resistance to voltage rise: dv/dt refers to the rising slope of the voltage in the off state, which is a key parameter to prevent false triggering. This value exceeds the limit and may lead to the phenomenon that thyristor is misleading. Because the manufacturing process of controlled silicon determines the parasitic capacitance between the A2 and the G, as shown in figure