vertical gate rf soi ligbt for spics with significantly improved latch-up immunity垂直门rf soi ligbt的美籍西班牙人显著提高封闭免疫力.pdfVIP

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vertical gate rf soi ligbt for spics with significantly improved latch-up immunity垂直门rf soi ligbt的美籍西班牙人显著提高封闭免疫力.pdf

vertical gate rf soi ligbt for spics with significantly improved latch-up immunity垂直门rf soi ligbt的美籍西班牙人显著提高封闭免疫力

Hindawi Publishing Corporation VLSI Design Volume 2011, Article ID 548546, 9 pages doi:10.1155/2011/548546 Research Article Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity Haipeng Zhang,1, 2, 3 Ruisheng Qi,1 Liang Zhang,1 Buchun Su,1 and Dejun Wang2 1 Key Laboratory of RF Circuit and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China 2 College of Electronic Science and Technology, Faculty of Electronic Information and Electric Engineering, Dalian University of Technology,

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