vibrational spectroscopy of chemical species in silicon and silicon-rich nitride thin films振动光谱的化学物种在氮化硅和富含硅元素的薄膜.pdf

Hindawi Publishing Corporation International Journal of Spectroscopy Volume 2012, Article ID 281851, 5 pages doi:10.1155/2012/281851 Research Article Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films Kirill O. Bugaev,1, 2 Anastasia A. Zelenina,1, 2 and Vladimir A. Volodin1, 2 1A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrentieva Avenue 13, Novosibirsk 630090, Russia 2 Physical Faculty, Novosibirsk State University, Pirogova Street 2, Novosibirsk 630090, Russia Correspondence should be addressed to Vladimir A. Volodin, volodin@isp.nsc.ru Received 24 March 2011; Revised 6 June 2011; Accepted 20 June 2011 Academic Editor: Alexander Milekhin Copyright © 2012 Kirill O. Bugaev et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Vibrational properties of hydrogenated silicon-rich nitride (SiNx :H) of various stoichiometry (0.6 ≤ x ≤ 1.3) and hydrogenated amorphous silicon (a-Si:H) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130◦C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical sp