Stress Control of Sibased PECVD Dielectrics Final（压力控制Sibased PECVD电介质决赛。）.pdfVIP

th Invited paper presented at 207 Electrochemical Society Meeting, Quebec City Canada, May 2005. Proc. Symp. Silicon Nitride and Silicon Dioxide Thin Insulating Films Other Emerging Dielectrics VIII, PV2005-01, 148-159, Electrochemical Society, Pennington, NJ (2005). STRESS CONTROL OF Si-BASED PECVD DIELECTRICS K. D. Mackenzie, D. J. Johnson, M. W. DeVre, R. J. Westerman, and B. H. Reelfs Unaxis USA, Inc., 10050 16th Street North, St. Petersburg, FL 33716. The Si-based dielectric films, silicon dioxide (SiO2) and silicon nitride (SiNx) prepared by plasma-enhanced chemical vapor deposition (PECVD), are used in device fabrication throughout the microelectronics and optoelectronics industries. The stress of these films can affect the electrical and optical characteristics as well as the integrity and reliability of the devices. In this paper, results are presented on a study of different techniques for stress control of these films. This includes discussion of a simple stress control method and the mechanism involved for SiNx achieved by addition of He to the standard SiH , NH , and N plasma 4 3 2 chemistry. A designed experiment has been used to optimize a low stress SiNx process based on this method on a commercial PECVD reactor developed for volume GaAs manufacturing. INTRODUCTION Key to the overall success of the plasma-enhanced chemical vapor deposition (PECVD) technique in the microelectronics and optoelectronics industries is the abili