Thin Film Magnetic Field Sensor Utilizing （利用薄膜磁场传感器）.pdf

1 Reserch Thin Film Magnetic Field Sensor Utilizing Magneto Report Impedance Effect Yuji Nishibe, Norikazu Ohta Abstract Recently, a magneto impedance effect found in a half bridge. The detecting element exhibits a amorphous wires with soft magnetic properties large impedance change ratio of more than 100% has been noted as a new principle in the sensing when an external magnetic field is applied. By magnetic field. According to this effect, the optimizing of the operating point via a bias field impedance of the wire in the range of high and processing the signal with a synchronous frequencies over 10 MHz changes remarkably rectifier circuit, no hysteresis, good linearity and with an external magnetic field. This effect is good stability even with temperature variation as expected to be promising for magnetic field well as high sensitivity in the sensor sensors with high sensitivity. Therefore, we have characteristics have been achieved. The variation attempted to introduce this effect into amorphous in the sensor output with the temperature is thin films to extend the application fields, and a largely reduced to one-third, compared to the novel thin film sensor sensitive to a small conventional thin film sensor we developed -3 magnetic field based