Tunable GaTeMoS van der Waals p n Junctions （可调GaTeMoS范德瓦耳斯p n连接）.pdfVIP

Letter pubs.acs.org/NanoLett Tunable GaTe-MoS2 van der Waals p−n Junctions with Novel Optoelectronic Performance Feng Wang,†,‡ Zhenxing Wang,† Kai Xu,†,‡ Fengmei Wang,†,‡ Qisheng Wang,†,‡ Yun Huang,†,‡ Lei Yin,†,‡ and Jun He*,† †CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China ‡University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, China S *Supporting Information ABSTRACT: P-n junctions based on vertically stacked van der Waals (vdW) materials have attracted a great deal of attention and may open up unforeseen opportunities in electronics and optoelectronics. However, due to the lack of intrinsic p-type vdW materials, most previous studies generally adopted electrical gating, special electrode contacts, or chemical doping methods to realize p-n vdW junctions. GaTe is an intrinsic p-type vdW material with a relatively high charge density, and it has a direct band gap that is independent of thickness. Here, we report the construction of ultrathin and tunable p- GaTe/n-MoS2 vdW heterostructure with high photovoltaic and photo- detecting performance. The rectification ratio, external quantum efficiency, and photoresponsivity are as high as 4 × 105, 61.68%, and 21.83 AW−1, respectively. In particular, the detectivity is up to 8.4 × 1013 Jones, which is even higher than commercial Si, InGaAs photodetectors. This study demonstrates the promising potential of p-GaTe/n-MoS2 heterostructures