庞磁电容及负电容效应之锗场效电晶体验证-国家奈米元件试验室.PDFVIP

1 02 The Demonstration of Colossal Magneto- capacitance and Negative Capacitance Effect with the Promising Characteristics of Jg-EOT and Transistor s Performance on Ge (100) n-FETs by the Novel Magnetic Gate Stack Scheme Design EOT (Equivalent Oxide Thickness) BaTiO3 FePt FePt BaTiO3 ( value) ~75% ( value) ~50% (I ) (J )~100 on g Abstract TSuper Jg-EOT gate stack characteristics, ultra-high value, and the promising transistor s performance are achieved on the Ge n-FET by the application of the BaTiO3 as the gate dielectric and the magnetic FePt film as the metal gate. The super Cgate/ -value is generated by more dipoles in the HK dielectric layer with the coupling of the build-in magnetic field from MG (HK: BaTiO 3; MG: magnetic FePt). With the demonstration of this classical colossal magneto-capacitance effect in this work, the value can be improved ~75% successfully together with the reduction of Jg ~100X and the Ion is imp