a new approach to the computer modeling of amorphous nanoporous structures of semiconducting and metallic materials a review计算机建模的新方法非晶态半导体和金属纳米多孔结构材料进行审查.pdfVIP

Materials 2010, 3, 467-502; doi:10.3390/ma3010467 OPEN ACCESS materials ISSN 1996-1944 /journal/materials Review A New Approach to the Computer Modeling of Amorphous Nanoporous Structures of Semiconducting and Metallic Materials: A Review 1 2 1 2 Cristina Romero , Juan C. Noyola , Ulises Santiago , Renela M. Valladares , Alexander Valladares 2 and Ariel A. Valladares 1,* 1 Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Ciudad Universitaria, Apartado Postal 70-360, México, D.F. 04510, Mexico; E-Mails: cromero22@ (C.R.); ulises_osa@.mx (U.S.) 2 Facultad de Ciencias, Universidad Nacional Autónoma de México / Ciudad Universitaria, Apartado Postal 70-542, México, D.F. 04510, Mexico; E-Mails: carlosnoyp@.mx (J.C.N.); renela6@ (R.M.V.); avalladarm@unam.mx (A.V.) * Author to whom correspondence should be addressed; E-Mail: valladar@unam.mx; Tel.: +52-55-5622-4636; Fax: +52-55-5622-4636. Received: 8 November 2009; in revised form: 20 December 2009 / Accepted: 11 January 2010 / Published: 15 January 2010 Abstract: We review our approach to the generation of nanoporous materials, both semiconducting and metallic, which leads to the existence of nanopores within the bulk structure. This method, which we have named as the expanding lattice method, is a novel transferable approach which consists first of constructing crystalline supercells with a