piezoresistive sensitivity, linearity and resistance time drift of polysilicon nanofilms with different deposition temperatures压敏电阻的灵敏度、线性度和不同沉积时间漂移多晶硅纳米薄膜电阻温度.pdfVIP

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piezoresistive sensitivity, linearity and resistance time drift of polysilicon nanofilms with different deposition temperatures压敏电阻的灵敏度、线性度和不同沉积时间漂移多晶硅纳米薄膜电阻温度.pdf

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piezoresistive sensitivity, linearity and resistance time drift of polysilicon nanofilms with different deposition temperatures压敏电阻的灵敏度、线性度和不同沉积时间漂移多晶硅纳米薄膜电阻温度

Sensors 2009, 9, 1141-1166; doi:10.3390/ OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Piezoresistive Sensitivity, Linearity and Resistance Time Drift of Polysilicon Nanofilms with Different Deposition Temperatures Changzhi Shi 1,2,*, Xiaowei Liu 1,2 and Rongyan Chuai 3 1 MEMS Center, Harbin Institute of Technology, Harbin 150001, Heilongjiang Province, P.R. China E-mail: lxw@ 2 Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Ministry of Education, P.R. China 3 Information Science and Engineering School, Shenyang University of Technology, Shenyang, Liaoning Province, P.R. China; E-mail: me_sut@163.com * Author to whom correspondence should be addressed; E-Mail: allex_shi@; Tel.: +86-451-8641-3451; Fax: +86-451-8641-3441 Received: 23 January 2009; in revised form: 12 February 2009 / Accepted: 18 February 2009 / Published: 23 February 2009 Abstract: Our previous research work indicated that highly boron doped polysilicon nanofilms (≤100 nm in thickness) have higher gauge factor (the maximum is ~34 for 80 nm-thick films) and better temperature stability than common polysilicon films (≥ 200nm in thickness) at the same doping levels. Therefore, in order to further analyze the influence of deposition temperature on the film structure and piezoresistance performance, the piezoresistive sensitivity, piezoresistive linearity (PRL) and resistance time drift (RTD) of 80 nm-thick highly boron doped polysilicon nanofilms (PSNFs) with different deposition