随机栅长变化引起纳米mosfet失配模型-计算机辅助设计与图形学.pdf

第28 卷 第7 期 计算机辅助设计与图形学学报 Vol. 28 No.7 2016 年7 月 Journal of Computer-Aided Design Computer Graphics Jul. 2016 随机栅长变化引起纳米MOSFET 失配模型 吕伟锋, 王光义, 林 弥, 孙玲玲 (杭州电子科技大学教育部射频电路与系统重点实验室 杭州 310018) (lvwf@hdu.edu.cn) 摘 要: 随着 CMOS 技术进入纳米工艺, 随机栅长变化成为影响集成电路性能和成品率最重要因素之一. 文中分析 并验证了纳米 MOS 器件随机栅长变化导致电流增益因子与阈值电压的之间的相关性及失配解析关系式, 并以此为 基础, 结合偏差传递理论实现了22 nm 工艺MOSFET 电流失配模型.仿真实验结果表明, 该模型揭示了短沟道效应导 致的器件阈值电压变化改变了载流子有效迁移率, 进而影响电流增益因子及器件电流的规律, 精确地估计了随机栅 长变化导致的电气参数统计变化特性. 关键词：失配模型; 纳米MOS 器件; 工艺参数波动; 短沟道效应 中图法分类号：TP386 A Mismatch Model for Random Gate Length Induced Variations in Nanometer MOSFETs Lu Weifeng, Wang Guangyi, Lin Mi, and Sun Lingling (Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018) Abstract: With the CMOS technology entering nanometer regime, random channel length variation has become one of the most important factors which affect the performance and yield of integrated circuits. This paper ana- lyzes and verifies the correlation and mismatch analytical formula for current gain factor and threshold voltage due to this process variation in nanometer MOS devices. And thus a 22 nm MOSFET current mismatch model is proposed according to the propagation of variation methodology. The experimental results show that, the pro- posed model reveals that short channel effect leads to threshold voltage shift and changes the effective carrier mobility, thereby affects the current gain factor and device currents. The proposed model accurately captures the statistical properties for random gate induced electrical parameter variations. Key words: mismatch model; nanometer MOSFET; process variation; short channel ef