热处理技术应对新工艺新材料的挑战txt版（The challenge of heat treatment technologies to new processes and materials TXT Edition）.docVIP

热处理技术应对新工艺新材料的挑战txt版（The challenge of heat treatment technologies to new processes and materials TXT Edition） The challenge of heat treatment technology to new process and new material Now, the semiconductor industry is at a new turning point: the distribution profile of doped impurities is approaching the nanometer level, and its distribution will seriously affect the device performance. This requires us to control the diffusion and activation of impurities at unprecedented levels, including increased activation levels and reduced thermal budget requirements. The gate stack structure, the substrate material, and the method of bonding formation are subject to new changes. All of these areas will have new materials, new processes, new product development, or new structures, said Randhir Thakur, vice president and general manager of Applied Materialss former product division. If the process integration of strained silicon, upgraded source and SiON can continue to drive 17% growth per year, we will delay the demand for high K materials. In fact, time is the key factor. Chip manufacturers have no time to study these new materials and new features, and they will be introduced to the semiconductor process, appropriate integration through the learning curve, and then produce a new chip, finally to the market. Jeff Hebb, RTP technology manager at Axcelis Technology, believes that RTP has two major trends. The first is the formation of metal silicide. When we develop from 130nm to 90nm and 65nm, metal silicides change from cobalt silicide to nickel silicide. Almost everyone thinks the 65nm process must be made of nickel metal, and some even believe that some of the high-performance components of the 90nm process will be used later. Paul RTP, director of technology at Mattson Technologys product division, predicts that the RTP range will be further extended, driven by a reduction in the thermal budget. Timans. He said: since we have entered the nano world, so the diffusion of