晶体管基础知识(2..3)（Transistor Basics (2..3)）.docVIP

晶体管基础知识(2..3)（Transistor Basics (2..3)） Transistor Basics Transistors: (semiconductor discrete devices) Semiconductor discrete devices refer to semiconductor diodes, three - stage transistors, and semiconductor special devices. Characteristic parameter: (diode) If: he is defined as positive DC current flows through the diode low resistance direction, the rectifier is defined as the provisions of the maximum working current conditions of use is rotating half wave rectifier circuit resistance load download allows continuous by the average value of silicon switch is defined as rated power under the maximum allowed by the diode positive pulse current. Ifm forward peak current: defined as the maximum forward pulse current allowed to pass through a diode under rated power. Vf forward voltage drop: he is defined as the average value of the voltage drop when the diode passes the rated current. Maximum reverse operating voltage: the silicon rectifier tube is the 2/3 of the breakdown voltage and the maximum reverse peak voltage added to the silicon stack as specified in the normal half wave resistive load circuit. For germanium detector tubes, silicon switching tubes are specified as reverse current, resulting in voltage between poles. Breakdown voltage: for soft breakdown such as germanium, switches, refers to the value of the voltage in the reverse current to a given pole, for the rectifier switch hard breakdown tube, refers to the peak voltage characteristic curve sharply reverse power. Characteristic parameter: (triode) HFE common emitter DC amplification factor: when the collector voltage and current is the specified value, the ratio of Ic to Ib. Fhfe common emitter cut-off frequency: defined as the frequency of 0.707 (i.e., 3dB) when HFE drops to 1khz. F0 characteristic frequency: when the frequency is high enough, HFE will decrease at a speed of 6dB per frequency, and FT is defined as the frequency of hfe=1. Icbo emitter open circuit, collector and base voltage as the