硕士论文-固相外延COSI2薄膜技术在深亚微米CMOS器件上的应用研究.doc

复旦大学;r程硕士学位论文 复旦大学;r程硕士学位论文 Y 952459 学校代码：10246 学 号：033021101 硕士学位论文 (专业学位） Q相外政CoSi2緣JBiiULft深JMBL米 CMOS?^上的產用所走 院系（所）：信息科学与工程学院专 业.电子与通信工程 ■姓 名： 陆杰指导教师药国平教授 ：完成曰期2005年11月11日 ? ? ABSTRACT It is well known that contact and interconnection of self-aligned CoSizS/D and gate IS one of the key process technologies of sub-- 0.25 m CMOS device and circuit fabrication. Recently, heteroepitaxial CoSis, prepared by interlayer mediated solid phase epitaxy (IMSPE) technology, shovs superior electrical characteristics and thermal stability, cofflpared with conventional poly CoSij. Especially titanium interlayer mediated epitaxy (TIME) is considered to be quite compatible with current CMOS process, which also can be self-aligned to form epitaxial silicide contact and interconnection in the source/drain (S/D) and gate area. So TIME technology is very promising in application for deep sub-micron device fabrication. In this thesis, two topics related to the epitaxy of CoSij and its application are studied. One Is Co/Ti/Si multilayer solid phase reaction with TiN capping and the properties of the epitaxial CoSU film. The other is the application of TIME technology in test wafers at 0.18Wn base line and evaluating its feasibility in sub-0. 25 Mm CMOS fabrication. Multilayer structure of Co/Ti/Si is used to form the epitaxial CoSU. The structure and composition of silicide film, interface between CoSij and Si substrate, epitaxy duality of CoSiz film, thermal stability and self-aligned process window are investigated by means of four point probe (FPP), X^ray diffraction (XRD), scanning electron microscopy (SEM) and cross sectional transmission electron microscopy (TEM). The role of Ti as interlayer layer during the epitaxial growth of CoS“ is also analyzed and revealed by comparing CoSii thin films which are formed by the reaction of Co/Si and Co/Ti/Si systems respectively- Main experimental results are listed below: (1) The interface formed by TIME between CoSi2 and Si