电气过应力-4.pdf

 Hello, and welcome to the video for the TI Precision Lab discussing electrical overstress,orEOS,part4.Inthisvideowewillcoverhowadeviceisdamagedb the mostcommontypesof harmfulelectricaltransients,andthestandardtests whichareusedtodetermineaproduct’srobustnessagainstthesetransients.  大家好，欢迎来到TI Precision Labs （德州仪器高精度实验室）关于电气 过应力的第4部分。本期视频中，我们将讨论哪些瞬时电气信号常常会对器 件造成损害，还有用来确认器件是否足够强悍以免遭这些瞬时电气信号损坏 的标准测试。  Howdoes a typical device become damaged? Let’s look at an example with a typicalopamp. The triggering of a device’s ESD protection cells is the primar issue with exceeding the op amp’s absolute maximum ratings. The schematic shown here depicts a generalized input/output (I/O) pad with ESD protection in the form of clamping diodes. If a voltage excursion with high enough voltage and currentoccursonthe I/Opad,these diodescanforwardconduct. Depending ontheseverit andfrequenc oftheseexcursions,theclampscanfailovertime. Some ESD cell topologies, such as silicon-controlled rectifier latches or SCR latches,areactuall designedtofailuponforwardconduction. This is just one example of how a device can become damaged. Of course, end-equipment manufacturers typicall want to create products which are as robustaspossibleandreacttotransientenerg inapredictableway.Todothis, productsaretested inadvanceunderharshelectricalconditionswhichsimulate therealworld.  通常器件是怎么被损坏的？我们以一个典型放大器为例来看下。 触发器件的ESD保护单元通常是因为超过了该放大器的绝对最大值。这个原 理图给出了一般放大器的输入输出以钳位二极管为形式的ESD保护。如果 I/O 焊盘上有足够高的电压偏移和电流，这些二极管会正向导通。根据这些 偏移的猛烈或者频繁程度，这些钳位二极管久而久之可能会失效。有些ESD 单元技术，比如硅控整流器，事实上设计的是正向导通失效。 这里只是其中的一个例子，说明一个器件是如何被损坏的。当然了，终端客 户通常想让生产的产品可靠性尽可能好，并且对瞬时能量能够预测。为了达 到这一目的，器件出厂前会先经历模拟严酷的现实世界的电气测试。  The IEC is a worldwide organization which promotes international cooperation on issues of standardization in electrical and electronic systems. The have developed a set oftransient an