临场穿透式电子显微镜分析于成长矽锗异质介面奈米线之应用.pdfVIP

1 02 In-situ Transmission Electron Microscopy Studies of the Growth of Si-Ge Heteroj unction Nanowires Abstract In-sit u t ransmission elect ron microscopy T EM st udy prov ides rich informat ion of t he growt h of nanomateria ls, including t he real morphology during growt h, kinetics for deriv ing growt h mechanisms, and growt h parameters. In t his report, t he growt h mechanism of nanowires derived f rom in-sit u T EM observations and t he applications to t he fabrication of Si-Ge heteroj unction structures in nanowires will be discussed. In the growth of heterostructure nanowires, the solubility of Si or Ge in catalysts is a key parameter to the compositional abruptness at the interface. Its found that there are periodic oscillations of morphology during Si nanowire growth. T hese oscillations are related to the change of Si supersaturation in the catalyst. Based on these observations, a particular AlAu2 alloy catalyst, which has low Si and Ge solubility and unnoticeable morphological oscillations, is used for the growth of Si/Ge heteroj unction nanowire. In the Si/ Ge heterostructures, there is no misfit dislocation at the interface; therefore, lattice mismatch strongly strains the Si and Ge lattices near the interface. It is expected that in such heteroj unction structures, the band structure or other physical properties of Si and Ge will significantly change. Keywords