各种半导体LED湿法清洗机.ppt

The end thank you 各种半导体LED湿法清洗机苏州晶洲装备科技施利君 DF PE Batch type: Conventional type Cassette type Cassette less type Single bath type Single wafer type: Scrubber SEZ Wet bench type Wet bench bath configuration SC1 DI HF DI SC2 DI DI DRY Pre Furnace Clean SC1: Standard Clean 1 SC2: Standard Clean 2 HF: Hydrofluoric Acid DI: De Ionized Water Lot Flow Typical Wet Clean Bath P Heat Exchanger filter pump Process bath Measurement tank Particle pattern defect Metal contamination Junction leak Organic contamination gate oxide leak Native oxide gate oxide leak Micro Roughnesss gate oxide leak The contamination and Its influence(沾污及其影响） SC: standard clean, RCA: A company name, DIW: de ionized water SC-1 (RCA1/APM: NH4OH: H2O2: DIW), SC-2 (RCA2/HPM: HCl: H2O2: DIW), CARO (SPM/Piranha: H2SO4: H2O2) H3PO4(H3PO4: DIW) BOE (Buffer oxide etch HF: NH4F) with surfactant（表面活性剂） DHF (Dilute HF) Dry System (Spin Dry/IPA Vapor Dry/Marangoni Dry) Key word SC1(MS) light organic particle remove DHF Remove chemical oxide or native OX SC2 Removal of metals impurities BOE: Remove oxide with PR HF/HNO3 Remove poly film. SPM(H2SO4:H2O2) Photo resist and metals ions H3PO4 Nitride remove 49%HF remove nitride and thick oxide Chemical application SC1 Typical Ratio : NH4OH : H2O2 : DI = 1:1:5-1:2:50 Temp : 40 – 80 C Mechanism: Solution oxidize surface organics and dissolves soluble complexes formed. PH is high ? Low stability of metal impurities NH4OH ? Dissolves SiO2 and etches Si H2O2 ? Oxidizer, forms layer of chemical oxide ? Deposition of some species of metals on oxide (e.g. Fe, Ca) Relationship of Zeta Potentials and pH Value SC2 Typical ratio: Hcl: H2O2:DI = 1:1:5 – 1:1:50 Temp : Typical 80c Purpose: Remove metallic impurities from wa