半导体(双语教学)桂电复习资料.docx

英文缩写MOS: metal- oxide semiconductor 金属氧化物半导体CVD：chemical vapor deposition 化学气相沉积ARC：anti-reflection coating 抗反射涂层MGS：metallurgical-grade silicon 冶金级硅IMD：inter metal dielectric 金属间介质CD： critical dimension 临界尺寸PECVD：plasma-enhanced CVD 等离子增强型CVDEGS： electronic-grade silicon 电子级硅EDA： electronic design automation 电子设计自动化PMD：pre-metal dielectric 金属前介质LED：light-emitting diode 发光二极管MFP：mean free path 平均自由行程SOG：spin-on glass 旋涂玻璃CMP：chemical mechanical polishing/planarization 化学机械抛光/研磨RIE： reactive ion etch 反应离子刻蚀MEMS： micro-electromechanical system 微机电系统PEB：post exposure bake 曝光后烘烤SOI：silicon-on-insulator 绝缘体上硅STI：shallow trench isolation 浅槽隔离RTA：rapid thermal annealing 快速热退火第四章1. Give two reasons why silicon is more commonly used than any other semiconductor material.（给出两个硅比其他半导体材料更常用的原因） ① abundant, cheap (便宜丰富) ② Silicon dioxide is very stable, strong dielectric, and it is easy to grow in thermal process.( 二氧化硅非常稳定而且有很强的介电性，在热处理过程中容易生长。) ③ Large band gap, wide operation temperature range. (带隙大、工作温度范围宽)2. List at least two preferred orientations of single-crystal silicon.（列出两种主要的单晶硅晶向） ① （100） ② （111）（详见P98）3. List the basic steps for making silicon wafers from sand.（列举用沙做硅晶片的基本步骤）① Quartz sand：silicon dioxide.② Sand to metallic grade silicon（MGS）.③ React MGS powder, with HCL to form TCS.④ Purify TCS by vaporization and condensation.⑤ React TCS to hydrogen（H2） to form polysilicon （EGS）.⑥ Melt EGS and pull single crystal ingot.⑦ Cut end, polish side, and make notch or flat.(去两端、径向研磨、定位边或定位槽)⑧ Saw ingot into wafers.（切片）⑨ Edge rounding, wafer lapping, wet etch, and CMP.(磨片与倒角，湿法刻蚀，CMP)⑩ Laser scribe.（激光划线）4. Describe the Czochralski（CZ）and the floating zone methods.deference.CZ method is more popular; floating zone(FZ);Cheaper; Larger wafer size ; pure silicon crystal; Reusable materials ; more expensive,smaller wafer size; mainly for power devices;CZ method：The Czochralski growth of a silicon monocrystal involves the transformation of molten SG silicon liquid into a s