Staudegger F and Hofbaur M W and Kruwinus H J Analyses and modeling of a wet chemical etch process on rotating silicon wafers with an impinging etchant jet英文文献.pdf
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H340 Journal of The Electrochemical Society, 156 5 H340-H345 2009
0013-4651/2009/1565/H340/6/$23.00 © The Electrochemical Society
Analyses and Modeling of a Wet-Chemical-Etch Process on
Rotating Silicon Wafers with an Impinging Etchant Jet
F. Staudegger,a,z M. W. Hofbaur,b and H.-J. Kruwinusa
aLam Research, SEZ-Strasse 1, 9500 Villach, Austria
b
Institut für Regelungs- und Automatisierungstechnik, TU-Graz, Kopernikusgasse 24, 8010 Graz, Austria
We investigate wet chemical etching of bare silicon wafers using a configuration where the wafer rotates and the etchant is
supplied to the wafer by a nozzle positioned above the wafer center. The purpose of this study is to identify the change of the
etch-rate profile on the wafer in relation to the parameters of speed of rotation, etchant flow rate, and etchant temperature. All of
them influence the flow velocity of the etchant on the wafer. As a consequence, we propose to use a simplified model that captures
the etchant flow velocity on the rotating wafer in sufficient detail to imply the etch-rate profiles for the wet-chemical-etching
process of bare silicon wafers. We validate our approach against measured etch-rate profiles for a wide variety of parameter
settings.
© 2009 The Electrochemical Society. DOI: 10.1149/1.3090176 All rights reserved.
Manuscript submitted October 27, 2008; revised manuscript received February 4, 2009. Published March 16, 2009.
Thinning silicon wafers is an important back-end-of-the-line pro-
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