精品电子束暴光介绍.pptVIP

Principle Full control over a very thin body region by two gates Fabrication thanks to e-beam - Beam diameter smaller than 2nm - Low energy (5 keV) - High resolution organic resist - Overlay accuracy thanks to scanning of registration marks - Silicon etching Double gate FinFET devices - Concept 20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices (2003), J. Kretz , L. Dreeskornfeld, J. Hartwich, W. Rosner Nanoscale FinFETs for low power applications (2004), W. R?sner, E. Landgraf, J. Kretz, L. Dreeskornfeld, H. Sch?fer, M. St?dele,T