碳化硅电力电子器件：挑战与机遇(普渡大学 James A. Cooper教授——直接排版吧).pdfVIP

Silicon Carbide Power Electronics: Challenges and Opportuni:es James A. Cooper Professor of Electrical and Computer Engineering Birck Nanotechnology Center Purdue University West Lafayee, IN 47907 USA 1 Proper:es of Silicon Carbide •  One of the hardest materials known • Breakdown electricfield ~ 7x higher than silicon • Power devicefigure-of-merit ~ 300x higher than silicon 2 SiC Crystal Structure Silicon Silicon Carbide Diamond Silicon Carbon Silicon Carbon EG = 1.12 eV EG = 3.25 eV EG = 5.47 eV 3 SiC Surprises Because the bandgap is ~3x wider than silicon... • ni is 18 orders-of-magnitude smaller than in silicon. (~7x10-9 cm-3 at 300 K) • Thermal genera:on rate (dark current) is ~1018 :mes lower than in silicon. • Intrinsic temperature is hundreds of degrees higher than silicon. • MOS capacitors do not go into inVersion at room temperature. • MOS interface states haVe Very long response :mes at room temperature. • Total number of MOS interface states is 3x larger than in silicon. • pn junc:on forward Voltage drop is ~3x higher than in silicon.