半导体材料与器件（林仕伟）第六讲 pn结IV特性_继续.pptVIP

Chapter 6 pn Junction Diode: I-V Characteristics 第6章 pn结二极管: IV 特性 Carrier injection and distributions under forward bias (cont.) Hole concentration injected into the n-bulk region, pn (x” = 0) = pn (0) Carrier injection and distributions under forward bias – brief summary Carrier injection and distributions under forward bias (cont.) Using the Continuity Equations (for minority carriers) p-bulk region i.e. x’ 0 n-bulk region i.e. x’’ 0 ?np = np - npo and ?pn = pn – pno where npo and pno are constant in uniformity doped p- and n-regions p-bulk region i.e. x’ 0 n-bulk region i.e. x’’ 0 Minority carrier diffusion currents in bulk regions The electron (minority carrier) diffusion current in the p-bulk region, i.e., x’ ? 0, is The injected electron (minority carrier) current density into the p-bulk region is Minority carrier diffusion currents in bulk regions (cont.) Hole (minority carrier) diffusion current in the n-bulk region, i.e., x” ? 0, is The injected hole current density into the n-bulk region is Minority carrier diffusion currents in bulk regions (cont.) Minority carrier diffusion currents in bulk regions (cont.) Since the total current density, J, must be constant throughout a pn junction Minority carrier diffusion currents in bulk regions (cont.) Reverse-bias breakdown 反向偏置的击穿 A pn junction in reverse bias exhibits an essentially voltage-independent saturation current, lo (of the order of 10-9 A or less), until a critical reverse bias (Vbr) is reached, at which reverse breakdown occurs. At the critical voltage (Vbr), which is known as the breakdown voltage of a pn junction diode, the reverse current through the diode increases sharply with little further increase in the voltage. Zener breakdown 齐纳过程 This type of breakdown occurs in diodes where both sides of the pn junction are heavily doped. This is due to a phenomenon called quantum mechanical tunneling. In quantum mechanical tunneling, the chances of a