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MH251
Micropower CMOS Output Hall Effect Switch
MH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity
micro-power switch. Superior high-temperature performance is made possible through a dynamic
offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage
normally caused by device over molding, temperature dependencies, and thermal stress.
MH251 is special made for low operation voltage, 1.65V, to active the chip which is includes
the following on a single silicon chip : voltage regulator, Hall voltage generator, small-signal
amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer
fabrication processing is used to take advantage of low-voltage requirements, component matching,
very low input-offset errors, and small component geometries. This device requires the presence of
omni-polar magnetic fields for operation.
The package type is in a Halogen Free version has been verified by third party Lab.
Features and Benefits
CMOS Hall IC Technology
Strong RF noise protection
1.65 to 6V for battery-powered applications
Omni polar, output switches with absolute value of North or South pole from magnet
Operation down to 1.65V, Micro power consumption
High Sensitivity for reed switch replacement applications
Multi Small Size option
Low sensitivity drift in crossing of Temp. range
Ultra Low power consumption at 5uA (Avg)
High ESD Protection, HBM ±4KV( min )
Totem-pole output
Applications
Solid state switch
Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video
Set)
Lid close sensor
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