MH251-低压微功耗全极性霍尔开关.pdfVIP

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MH251 Micropower CMOS Output Hall Effect Switch MH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH251 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a single silicon chip : voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. Features and Benefits  CMOS Hall IC Technology  Strong RF noise protection  1.65 to 6V for battery-powered applications  Omni polar, output switches with absolute value of North or South pole from magnet  Operation down to 1.65V, Micro power consumption  High Sensitivity for reed switch replacement applications  Multi Small Size option  Low sensitivity drift in crossing of Temp. range  Ultra Low power consumption at 5uA (Avg)  High ESD Protection, HBM ±4KV( min )  Totem-pole output Applications  Solid state switch  Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set)  Lid close sensor

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