半导体器件物理(刘洋)MS-contact-part2--青少年教育精选.pptVIP

JFET and MESFET Si JFET GaAs MESFET Breakdown characteristics for Si JFET and GaAs MESFET Gate and Drain similar to a junction Gate-Drain breakdown is like a junction BD * drdgthtrhtrj JFET and MESFET Tunneling current of GaAs MESFET -related to channel current and junction temperature -earlier impact ionization GaAs material property Higher current than that for Si Temperature effect inducing earlier impact ionization * drdgthtrhtrj JFET and MESFET Method to improve breakdown voltage -increase the distance between gate and drain --introducing a doping gradient in the lateral direction --RESURF technology (reduced surface field concept? ) * drdgthtrhtrj JFET and MESFET RESURF structure * drdgthtrhtrj JFET and MESFET Normally-on and Normally-off device Power consumption consideration * drdgthtrhtrj JFET and MESFET Ψbi can deplete the channel Ψbi has a limit on energy gap Channel doping limitation Channel width limitation Channel current limitation Build-in potential can deplete the channel * drdgthtrhtrj JFET and MESFET Microwave characteristics GaAs MESFET: Applications: low noise amplifier; high efficient power; high speed logic * drdgthtrhtrj JFET and MESFET Input resistance The leakage current between gate and channel junction Then input resistance is * drdgthtrhtrj JFET and MESFET Input resistance evaluation IG approaches 0 and I0 ~ 10-10 A, with Input resistance ~ 250M ohm High input resistance device Compare with MOSFET? * drdgthtrhtrj JFET and MESFET Series resistance -Voltage drop on series resistance Effective voltage: VG-eff=VG-IDRS; VD-eff=VD-ID (RS+RD) In linear region RDS = RS +RD+RCH In saturation region No contribution from VD , only Rs input * drdgthtrhtrj JFET and MESFET Cut-off frequency: frequency of unity gain Taking C’par=0; C’G= C’GS+ C’GD fT is related to L/v * drdgthtrhtrj JFET and MESFET L/v is the transit time for a carrier traveling from S to D In saturation region, v=vs For channel length =1um, transit time =10 ps