绝缘栅(IGBT)器件驱动技术研究.docVIP

摘 要 在电力电子器件中，IGBT的综合性能方面占有明显优势，并广泛地运用在各类电力变换装置中。然而如何有效地驱动并保护IGBT，成为电力电子领域中的重要研究课题之一。本文讨论了IGBT 驱动电路对其静态和动态特性的影响以及对驱动电路与过流保护电路的要求。利用IGBT 的通态饱和压降与集电极电流呈近似线性关系的特性，设计了一个具有完善的过流保护功能的IGBT 驱动电路.经分析和实验表明，该电路具有简单、实用、可靠性高等优点。 绝缘栅双极型晶体管IGBT是一种由双极型晶体管与MOSFET组合的器件，它既有MOSFET的栅极电压控制快速开关特性，又具有双极型晶体管大电流处理能力和低饱和压降的特点。但IGBT的门极驱动电路影响其通态压降、开关时间、开关损耗、承受短路电流能力等参数，决定了IGBT的静态与动态特性。因此，使用IGBT最重要的工作是设计驱动与保护电路。驱动IGBT的电路应根据栅极对驱动信号的要求，具备下列性质：驱动电路应具有较强的动态驱动能力，能为IGBT栅极提供陡峭前后沿的驱动脉冲；能向IGBT提供适当的正向或反向栅压；驱动电路应有足够的输入输出电隔离能力；理想的驱动电路要求输入输出信号传输无延时；驱动电路应具有一些基本的保护和自保护功能。 关键词；IGBT; 驱动电路; 过流保护 Abstract In power and dectronic elecvices，the combination property of IGBT has clear superiorty,which is widely used variour electric equipment．However，now to drive and protect IGBT efectively has become one of the important tasks in power and electronic fields. The influence of static and dynamic characteristic by IGBT drive circuit and the requirements for drive-current protection circuit are described. A new circuit of IGBT drive and over-current protection circuit with perfect performance is developed. It based on the principle of collector-emitter saturation voltage-drop approximately proportion to the collector current.Analysis and experiment results show that the new circuit has the advantages of simple,reliable,great application value and so on. Insulation grid double pole transistor IGBT is one kind by the double pole transistor and the MOSFET combination component, it both has the MOSFET grid bias control split-second-selection characteristic, and has the double pole transistor big electric current handling ability and the low saturated pressure drop characteristic.But the IGBT gate actuates the electric circuit to affect its condition pressure drops, the switching time, the switch extremely loses, parameters and so on withstanding short-circuit current ability, has decided the IGBT static state and the dynamic characteristic.Therefore, uses the IGBT most important work is designs the actuation and t