ZnO基GaNLED.pptVIP

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ZnO基GaNLED

Project Objectives Develop solid state lighting technology based on wide bandgap ZnO light emitting diodes (LED) Achieve high p-type carrier concentrations in epitaxial (Zn,Mg)O thin films Realize band edge emission from a ZnO-based pn homojunction Achieve band edge emission for ZnO-based pn heterojunctions that are designed to yield efficient light emission. Related objectives Understand the doping behavior of phosphors and nitrogen in ZnO and ZnMgO Identify the potential and limitations of ZnO pn junction LED performance Achieve electroluminescence in polycrystalline ZnO-based pn junctions fabricated on glass. Expected Benefits Enhanced Performance in LEDs Light-emitting diode technologies are the most attractive approach to energy-efficient solid state lighting ZnO appears equivalent to the nitrides ( leading material candidate) for all relevant optical properties and has an exciton state that is significantly more stable at room temperature holds significant potential to outperform the nitride devices Reduction in Cost ZnO-based devices have been realized using thin films deposited at temperatures on the order of 400-600?C, which is significantly lower that that for the nitrides. Reduced temperature alone should lead to lower manufacturing costs. Functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. For the large-area photonic application of solid state lighting, polycrystalline ZnO LED’s would present a remarkable opportunity for technology. Budget Period Project Status (Budget Period 2) ZnO-based pn junctions for light emitting diodes Three pertinent issues Project Status (Budget Period 2) Research task with milestones in Budget Period 2 p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source p-n junctions have been formed in lightly n-type (1017 cm-3) bulk, single-crystal ZnO substrates by diffusion of P from a Zn3P2 dopant source in a closed-ampoule system. Electroluminescence From N+

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