C-V测试.docVIP

译者按：C-V测试是一个被广泛用于半导体测试的参数，尤其是MOSCAP和MOSFET结构的半导体。其他的一些半导体器件和技术也可以用C-V测量来特征化，包括双极性晶体管，JFETs,III-V 符合器件等。本文会讲到一些C-V测试的的应用和一些定律。Capacitance-voltage (C-V) testing is widely used to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures. However, other types of semiconductor devices and technologies also can be characterized with C-V measurements, including bipolar junction transistors, JFETs, III-V compound devices, photovoltaic cells, MEMS devices, organic thin film transistor (TFT) displays, photodiodes, and carbon nanotubes. The fundamental nature of these measurements makes them relevant to a wide range of applications and disciplines. They are used in the research labs of universities and semiconductor manufacturers to evaluate new materials, processes, devices, and circuits. C-V measurements are extremely important to product and yield enhancement engineers responsible for improving processes and device performance. Reliability engineers use these measurements to qualify material suppliers, monitor process parameters, and analyze failure mechanisms. With appropriate methodologies, instrumentation, and software, a multitude of semiconductor device and material parameters can be derived. This information is used all along the production chain beginning with evaluation of epitaxially grown crystals including parameters such as average doping concentration, doping profiles, and carrier lifetimes. In wafer processes, C-V measurements can reveal oxide thickness, oxide charges, contamination from mobile ions, and interface trap density. These measurements continue to be important after other process steps such as lithography, etching, cleaning, dielectric and polysilicon depositions, and metallization. After devices are fully fabricated on the wafer, C-V is used to characterize threshold voltages and other parameters during reliability and basic device testing and to model the performance of these devices. The Physics of Semiconductor Capacitan