低能量高掺杂磷原子注入经快速热退火后的杂质分布-中国科技论文在线.PDFVIP

中国科技论文在线 低能量高掺杂磷原子注入经快速热退火后 的杂质分布影响因素研究 韡** 5 200240 摘要： 10 55 , 15 关键词： 中图分类号：TN305.99 Influence factors of impurity distribution in low energy and highly doped phosphorus atoms implanted by RTP WANG Weiqi, HUANG Qiyu 20 (School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240) Abstract: In the semiconductor device, improve the switching speed and reduce the leakage current or has become a hindrance to the development of the industry can not reconcile the contradiction. However, the vigorous development of the semiconductor industry to promote the continuous development of the 25 device manufacturing process, ultra-shallow process and cutting-edge annealing process is based on this development. Ultra-shallow junction process based on low-energy high-dose injection conditions, which is characterized by well depth, device switching speed. The rapid annealing process has a small heat input, a quick rise or cooling rate, and a significant effect in suppressing the lateral diffusion of impurities. Based on the 55nm process platform, the distribution