MBR360推荐.pdfVIP

   Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D      . . . employing the Schottky Barrier principle in a large area metal–to–silicon   power diode. State–of–the–art geometry features epitaxial construction with   oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity   protection diodes.   • Extremely Low vF MBR340 and MBR360 are • Low Power Loss/High Efficiency Motorola Preferred Devices • Highly Stable Oxide Passivated Junction • Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER Mechanical Characteristics: RECTIFIERS • Case: Epoxy, Molded 3.0 AMPERES • Weight: 1.1 gram (approximately) 20, 30, 40, 50, 60 VOLTS • Finish: All Ext