碳管之导电路径3D.PPT

Bent Nanotube- Nano-Schottky barrier armchair zigzag M 1/3M, 2/3S 假設為S-M(機率大), 此結構具整流效應, 也就是說電流只能由M流向S 無法回流 zigzag armchair STM tip STM TIP Localized state (local Schottky device) 波向量在六連環結構上可來回 波向量不可逆 Science by C.M. Leiber et al 多層碳管之導電路徑為那一層---每層均可導電, 但一般是最外層, 因為只有最外層與金屬電極接觸 (注意: 電子不可能跳躍層與層之 間距離而由內層跳至外層 Outermost layer Innermost layer 電極 e- e- e- 前述碳管電性取決於直徑與螺旋性, 因此多壁碳管有可能 是每層電性不同. M S Science,292, 706, 2001 Removal of carbon layers by Electrical breakdown M S Contribution to total conductance from individual layers Carbon nanotubes can carry electrical current up to 109 A/cm2 So how to remove carbon layers in a vacuum via electrical breakdown? Current induced defect formation Self-heating Defect extension Removal of carbon layer on the order of ms 1. Alternative electronic property of MWNTs, M-S-M-S 2. Removal of each layer reduces current of 19 ?A. 3. A MWNT conducts electrical current only at outer-layer where they contact with electrodes. Nevertheless, when MWNTs are modulated at higher bias voltage the inner-layers also contribute to nanotube conductance via inter-layer barriers (thermally activated conduction). Summaries 4. Inner layers only contribute limitedly to nanotube conductance, because they have to overcome interlayer barriers of 0.34 nm spacing. 早期量測單根多壁碳管 1. J. Vac.Sci.Tech. B, 13, 327, 1995, by Rivera et al (STM) 2. Syn.Metals. 70, 1393, 1995, by Langer et al (STM + lithographic tech) 3. Nature, 382, 54, 1996, by Ebbesen et al (four terminal + lithographic tech) 4. Science, 272, 523, 1996, by Dai et al (four terminal + lithographic tech) Two terminal method Four terminal method 1. Averaged resistivity of nanotube tube is 10-4 ~ 10-5 ?m.(arc made) 2. Resistivity of metallic nanotubes is 10-6 ?m. (arc made) 3. Resistivity of defective carbon nanotubes is 10-2 ~ 10-3 ?m. (pyrolysis made) 4. Band gap of semiconducting nanotubes is 0.1 – 2 eV, and is thermally activated type (negative temp coefficient of resistivity), a