陈秀芬-国立彰化师范大学.pptVIP

國立彰化師範大學物理系 楊勝州 High Brightness Light Emitting Diodes Chapter 3 Chapter 4 Reporter：楊勝州 Chapter 3： AlGaAs Red Light Emitting Diodes 1.Introduction 2.Device Design 3.Crystal Growth 4. Electroluminescent Spectra 1.Introduction Gallium arsenide (GaAs) is a direct-energy-gap semiconductor with an energy gap(1.424 eV) in the near-infrared (IR) portion of the electromagnetic specrum. Aluminum arsenide (AlAs) is an indirect-energy-gap semiconductor with an energy gap(2.168 eV) in the yellow-green portion of the electromagnetic specrum. As the AlAs mole fraction x of AlxGa1-xAs is raised from zero, the energy gap of the resulting compound increases from that of GaAs to that of AlAs. When the value of x is 0.45,the semiconductor switches from having a direct-energy gap to having an indirect-energy gap. GaAs and AlAs differ in lattice constant by less than 0.2% at 250C,so this enables the growth of very high quality AlGaAs films on GaAs substrates. 2.Device Design n-type and p-type are differences in the deep levels and crystal defects that can change with the type of dopant used, so they can exhibit different luminescence efficiencies. The device uses heterostructure Design(異質介面) As the direct-energy-gap to indirect-energy-gap transition is approached, the internal efficiency of AlGaAs LEDs falls rapidly. This occurs because more and more of the injected minority-carrier electrons reside in the indirect minima and thus are unavailable for radiative recombination. 3.Crystal Growth Molecular beam epitaxy is a crystal-growth technique in which material is deposited by evaporating individually controlled source materials onto a heated substrate in an ultrahigh vacuum chamber(真空腔). Molecular beam epitaxy is capable of producing high-quality AlGaAs heterostructure devices with very uniform thickness and doping characteristics, and it is often employed for the growth of AlGaAs laser diodes. The growth rates in MBE are very slow(0.1 to 2 mm/h) Crysta