电气工程及其自动化专业英语第三单元演示教学稿.ppt

Chapter 3 Power Electronic Technology Section 1 Semiconductor Switches semiconductor n. 半导体 power electronic n. 电力电子 loss n. 损耗，损失 winding n. ①绕组，线圈 ②一圈，一转 transformer n 变压器，变换器，变量器 dielectric n. 介质，电介质，绝缘材料；a. 绝缘的，介电的，介质的，不导电的 Words eddy n. 涡流，旋涡； a. 涡流的，涡旋的；v. 涡流，起旋涡 hysteresis n. 磁滞，滞后，迟滞 on-state a. 通态的，接通的，开态 off-state a. 关态的，断开的，断态的 microamp n. 微安 milliamp n. 毫安 Words waveform n. 波形 zero-voltage 电压过零的 zero-current 电流过零的 Words [1]The switching losses are significant and can be managed. They can be further divided into three components: (a) the on-state losses, (b) the off-state losses and ③the losses in the transition states. 开关损耗是很大的，但可以控制。开关损耗进一步可以分解成三个部分：接通状态、关断状态和变换状态的损耗。 Notes [2]The practical switching devices have limited capabilities of rate of voltage transition and the rate of current steering. These nonabrupt transition ratesgive rise to power losses in the switching devices. We will examine these switching losses in two cases separately: the inductive and capacitive loads. 实际开关装置限制了电压变换速率和电流换向速率。非突变引起了开关装置的功率损失。我们将分别从感性负载和容性负载两种情况来分析开关损耗。 Notes [3]The switching power losses increase linearly with the switching frequency like in the resistive case but about six times more. The upper bound on the switching frequency is also about half. 类似于电阻负载的情况，开关功率损耗随着开关频率线性增大，但大约为电阻负载情况的6倍多。开关频率的上限也约为一半。 Notes Exercises 课内完成section 1中的Exercises I, II and III  电力电子器件Power Electronic Device ‘‘Power Electronics Technology’’ 《电力电子技术》 ‘‘ Analog Electronic Techniques ’’ 《模拟电子技术》 Semiconductors 半控型器件： Thyristor 晶闸管 (SCR: Silicon Controlled Rectifier) 全控型器件： GTR 晶体管 (Giant Transistor) IGBT 绝缘栅双极晶体管 (Insulated-Gate Bipolar Transistor) Power MOSFET 电力场效应晶体管 (Metal Oxide Semiconductor Field Effect Transistor) GTO 门极可关断晶闸管 (Gate-Turn-Off Thyristor) 不可控器件： Power Diode (Semiconductor Rectifier)  电力电子器件Power Electronic Device Transition of Part of Speech