Removing Contaminants From Si Wafers Using an O2 Plasma从硅晶片使用氧等离子体去除污染物.pptVIP

Removing Contaminants From Si Wafers Using an O2 Plasma Ross Robinson Aaron Jackson Methodology Use Ellipsometry to measure apparent optical thickness. Modeled as thick Si with layer of SiO2 of unknown thickness. Ellipsometry can not quantitatively differentiate between SiO2 and contaminants A known evil is better A monolayer of polydiallyldimethyl-ammonium chloride (DADMAC) is applied. Well known polymer. Self assembles a monolayer Ellipsometry typically reported 8 ? increase in apparent thickness 2 Plasma Sources Used “LFE” Simple to use Gas flow controlled by needle valve RF Power controlled by a POT “Matrix” Complicated Microprocessor control Gases regulated by 3 mass flow controllers Digital RF power control Designed to handle wafer in a production environment LFE Run at 250 W RF power ~ 0.1 Torr Pressure Initial test with 8 fragments of a wafer “Matrix” System 0.120 Torr Pressure 250W RF (max 350) 0.75 SCCM O2 flow No extra heat applied Test with 38 fragments Loaded by placing fragments on top of 4” Si wafer. Conclusions O2 Plasma can remove all the polymer! The matrix system works much faster than anticipated. Contaminants accumulate very rapidly. For Further Investigation Is it really SiO2 that builds up? Further tests with short exposures. Can the rate be slowed by reducing the O2 partial pressure? Selectivity? Putting It All Together Wafer cleaned with Opticlean to remove bulk contaminants. 22.76 ? residue left on surface 1:20 in O2 plasma Plasma removed 21.55 ? * RF *