Electrical switching in carbon nanotubes and conformational ：碳纳米管和构象的电气开关.ppt

Collaborators Sangbong Lee, Seungchul Kim, Byoung Wook Jeong (Seoul Nat’l Univ.) Young-Woo Son ,Marvin Cohen, Steven Louie (Berkeley) Summary Conductance of metallic CNTs with impurities and applied electric fields is studied. With N and B impurity atoms on opposite sides, asymmetric switching is possible using external fields. With a large vacancy complex, symmetric switching is possible using external fields. Summary Electrical pulse is found to induce molecular flip between trans and cis structures. Example of MATERIAL DESIGN : totalreflection by three nitrogen impurities Changing Eext is different from changing U. Power consumption of SED, LCD, PDP (36in) Projection on to the impurity |? where Reflection for the specific state |? : Total transmission : Resonance condition : With applied electric fields, Suppose ?H at site α is ?E. In other words, is G0(α;E) shifted by ?E. : G0 projected at site a Effect of Eext : Green’s function itself changes. (10,10) SWNT with single attractive impurity of U=-5|t| * Jisoon Ihm School of Physics, Seoul National University Electrical Switching in Carbon Nanotubes and Conformational Transformation of Chain Molecules 2006. 8. 30 Basics:Substitutional Impurity in Metallic Carbon Nanotubes Boron or Nitrogen Tube axis Electronic Structure of Metallic Armchair Nanotube Band structure of a (10,10) single-wall nanotube ( LDA, first-principles pseudopotential method ) VBM CBM Tube axis Conductance with Boron Impurity A A Similarity to acceptor states in semiconductors H.J. Choi et al, PRL 84, 2917(2000) Conductance with Nitrogen Impurity Similarity to donor states in semiconductors D D I. Electrical switching in metallic carbon nanotubes ( Y.-W. Son, J. Ihm, etc., Phys. Rev. Lett. 95, 216602(2005) ) Metallic and semiconducting carbon nanotubes are produced simultaneously. Selection Problem! Semiconducting nanotubes : easy to change conductance using gate Metallic nanotubes: robust against impur