algangan微波功率器件建模与功率合成研究 word格式.docxVIP

摘要摘要近年来，随着人们对电子器件的高温、高频、大功率、抗辐射等性能的要求不断提高，GaN材料作为第三代半导体材料的代表，得到了迅速的发展。AlGaN/GaNHEMT器件在高温、高频、大功率、抗辐射等应用领域有着广阔的前景和巨大的潜力。准确的器件模型的建立，对于微波和射频电路的设计是至关重要的。本论文围绕AlGaN/GaNHEMT器件模型开展研究，建立了AlGaN/GaN HEMT 器件的等效电路模型并进行参数提取，并对微波功率合成进行分析，设计了基于AlGaN/GaN HEMT 的微波功率合成电路。首先，介绍了AlGaN/GaN HEMT 的器件结构和工作原理，并对几种小信号模型进行了分析。从小信号线性分析入手，对AlGaN/GaN HEMT 小信号等效模型进行详细讨论，建立了合适的小信号等效模型，对模型参数的提取进行研究。接着，基于大信号工作状态，介绍了几种大信号直流I-V特性模型，以Angelov模型为基础进行了大信号模型研究。最后，对微波功率合成放大器分类介绍，设计了中心频率为5.0GHz的微带型Wilkinson 功率分配/合成器，并进行了AlGaN/GaNHEMT 微波功率放大电路的设计，中心频率5.0GHz下，单管功率放大器的最大输出功率为32dBm，附加功率效率为34%，双管功率放大器最大输出功率为35.3dBm，附加功率效率为28%。关键词：AlGaN/GaNHEMT，小信号模型，大信号模型，功率合成IABSTRACTABSTRACTInrecentyears,withthedemandofhightemperature,highfrequency,resist radiation, high performance requirements ，as the representative of thethird generationofsemiconductormaterials,GaNhasgotrapiddevelopment.AlGaN/GaNHEMT deviceshavebroadprospectsandhugepotentialinthefieldsofhightemperature,high frequency,highperformance,andresistradiation.Accuratedevicemodelisvery importantforthedesignofmicrowaveandRFcircuit.Thispapermadeastudyaround AlGaN/GaNHEMTdevicemodels,establishedaequivalentcircuitmodelAlGaN/GaN HEMTdeviceandextractedtheparameters,microwavepowersynthesisareanalyzed,a GaN HEMTmicrowavepower combination circuit is designed withthe software ADS.Firstly,thispaperintroducesAlGaN/GaNHEMTdevice’sstructureandworking principle.Severalsmallsignalmodelswereanalyzed.Basedontheanalysisofsmall signallinearanalysis,AlGaN/GaNHEMTsmallsignalequivalentmodelwere discussedindetails.Asuitablesmallsignalequivalentmodelwasestablished.The extraction ofthe parameters of the model was also studied.Secondary,introducedseveralbigI-VcharacteristicsofDCsignalmodelbasedon thelargesignalworkingcondition.AstudywhichisbasedonAngelov modelwas made.Finally,microwavepoweramplifierswereintroducedaccordingtothecategory. ThispaperdesignedamicrostripWilkinsontypepowersynthesizer/synthesizerwitha centerfrequencyof5.0GHz.AlGaN/GaNHEMTmicrowavepoweramplifierswiththe centerfrequencyo