黑硅电池中你需要掌握的半导体基础工艺相关知识.ppt

20 minutes Deep Reactive Ion Etch for Silicon 57.2 mm silicon 2 mm silicon scalloping 原子力显微镜的针尖 硅加速度计 3. 湿法刻蚀 ? Isotropic etching 各向同性 – Same etch rate in all directions – Lateral etch rate is about the same as vertical etch rate – Etch rate does not depend upon the orientation of the mask edge ? Anisotropic etching 各向异性 – Etch rate depends upon orientation to crystalline planes腐蚀速率依赖于晶向 – Lateral etch rate can be much larger or smaller than vertical etch rate, depending upon orientation of mask edge to crystalline axes – Orientation of mask edge and the details of the mask pattern determine the final etched shape掩膜边的取向和掩膜图案决定最终的腐蚀形状 ? Can be very useful for making complex shapes ? Can be very surprising if not carefully thought out ? Only certain “standard” shapes are routinely used Etching Chemistry腐蚀化学 ? The etching process involves: – Transport of reactants to the surface 传输 – Surface reaction 表面反应 – Transport of products from the surface ? Key ingredients in any wet etchant: – Oxidizer氧化剂 ? examples: H2O2过氧化氢, HNO3硝酸 – Acid or base to dissolve oxidized surface酸或碱消解氧化表面 ? examples: H2SO4, NH4OH – Dillutent media to transport reactants and products through稀释剂 ? examples: H2O, CH3COOH 草酸 Redox Reactions(氧化还原反应) ? Etching is inherently an electrochemical process（电化学过程）: – It involves electron transfer processes as part of the surface reactions. ? The oxidation number is the net positive charge on a species. ? Oxidation is the process of electron loss, or increase in the oxidation number.电子损失 ? Reduction is the process of electron gain, or decrease in the oxidation number. 电子增加 ? Redox reactions are those composed of oxidation of one or more species and simultaneous reduction of others. Key Technologies of Wet Etching Profiles: Isotropic and Anisotropic Applications: Silicon, Silicon Nitride, Silicon Dioxide, Metal Controls: Doping, Electrochemical, Film Quality, Mask Materials Isotropic etching of s