MAE法制绒工艺的研究.pdfVIP

23rd European Photovoltaic Solar Energy Conference, 1-5 September 2008, Valencia, Spain TEXTURIZATION BY METAL-ASSISTED CHEMICAL ETCHING FOR SILICON SOLAR CELLS Marek Lipinski (1) , Jakub Cichoszewski(2) 1 Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Cracow, Poland, tel: +48 33 8174249; Fax: +48 12 6372192; email: marlipin@wp.pl 2 Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany ABSTRACT: This paper describes a surface texturization method for crystalline silicon solar cells which bases on metal-assisted chemical etching (MAE). Palladium particles are deposited on multi-crystalline wafers by immersing in PdCl solution. Porous silicon forms by metal-assisted chemical etching in a HF:H O solution. A following etch 2 2 2 step in either a KOH solution or a HF:HNO3 solution results in different topographies of the textured mc-Si surface. The MAE texturization decreases the effective reflectivity of mc-Si wafers to Reff = 10.8 %, which lowers surface reflection significant compared to a state of the art acidic texturization with Reff = 18.6 %. The presented method of texturization shows large potential for improving the efficiency of industrial solar cells based on every crystalline Si material. Keywords: texturisation, etching, multicrystalline silicon wafer surface. Now the wafers are prepared for the MAE 1 INTRODUCTION procedure. Reduction of optical losses by surface texturization is