毕业设计多晶硅铸锭中的杂质分布及其影响因素doc.doc

多晶硅铸锭中的杂质分布及其影响因素 摘 要 近年来，太阳电池发电受到了人们的日益重视。硅是当前用来制造太阳能电池的主要材料，由于低成本、低耗能和少污染的优势，目前铸造多晶硅已经成功取代直拉单晶硅而成为最主要的太阳能电池材料。深入地研究材料中的杂质分布利于生产出高成品率的铸造多晶硅锭，降低铸造多晶硅太阳能电池的制造成本，同时也是制备高效率铸造多晶硅太阳能电池的前提。 本文对多晶硅中的杂质及其分布作了深入的研究。多晶硅中出现的杂质是影响其太阳能电池转换效率的重要因素之一。本文利用微波光电导衰减仪(μ—PCD)，，以及扫描电镜等测试手段，对铸造多晶硅中的杂质及分布情况以及少子寿命的分布特征进行了系统的研究。主要包括以下三个方面：氧、铁、碳在铸造多晶硅中的分布规律；铸造多晶硅所测区域内杂质的种类及分布情况；铸造多晶硅中杂质浓度的分布与材料少子寿命的关系。采用μ—PCD测得了沿硅锭生长方向(从底部至顶部)的少寿命分布图。结果显示距离硅锭底部3-4 cm，以及顶部3 cm的范围内存在一个少子寿命值过低的区域，而硅锭中间区域少子寿命值较高且分布均匀。进一步通过理论分析得出多晶硅杂质分布的情况以及杂质的来源和影响杂质分布的因素。 关键词：多晶硅，碳，氧，金属  Polysilicon ingots in the distribution and determinants of impurities ABSTRACT In recent years, it was becoming more end more important to utilize solar energythrough solar cells．Because low-cost, low energy consumption and less pollution of the advantages of polysilicon has been successfully replaced by the current cast Czochralski silicon solar cells become the main material. In-depth study of the distribution of impurities in materials help to produce high yields of casting silicon ingots, cast polycrystalline silicon solar cells reduce manufacturing costs, but also highly efficient preparation of cast polycrystalline silicon solar cells premise. In this paper, and distribution of impurities in silicon in depth study. Polysilicon impurities appear to influence the solar cell conversion efficiency of one of the important factors. By using microwave photoconductivity decay meter (μ-PCD),, and scanning electron microscope test means of casting silicon impurities and minority carrier lifetime distribution and the distribution of characteristics of the system. Include the following three aspects: oxygen, iron, carbon in the casting of the Distribution of polysilicon; cast polycrystalline silicon measured in the region and the distribution of the types of impurities; cast polycrystalline silicon in the impurity concentration distribution of minority carrier lifetime relationship with the material. Won by μ-PCD measurements along the ingot growt