微电子处理扩散Microelectronics Processing Diffusion.ppt

3/99 Microelectronics processing - E. Finkman Doping Comparison of thermal diffusion and ion implantation Typical diffusion coefficient values Thermal diffusion – general comments Dopant diffusion sources Junction depth Irving’s curves: Motivation to generate them Irving’s curves Figure illustrating the relationship ofNo, NB, xj, and Rs Diffusion of Gaussian implantation profile Note: Q is the implantation dose. Q * * Microelectronics Processing Course - J. Salzman - 2006 Microelectronics Processing Diffusion Doping is the process that puts specific amounts of dopants in the wafer surface through openings in the surface layers. Thermal diffusion is a chemical process that takes place when the wafer is heated (~1000 C) and exposed to dopant vapor. In this process the dopants move to regions of lower concentration. Doping Control is critical in MOS device scaling. (Scaling down the gate length requires equal scaling in doping profile) Thermal diffusion Ion source Ion implantation Mathematics of diffusion:Fick’s First diffusion law F F D is thermally activated Mathematics of diffusion:Fick’s Second diffusion law What goes in and does not go out, stays there ?C/?t = (Fin-Fout)/ ?x Fick’s diffusion law F F Concentration independent diffusion equation. Often referred to as Fick’s second law. Analytic solutions of the diffusion equations:Case of a spike delta function in infinite media ?(x) The evolution of a Gaussian diffusion profile Peak concentration decreases as 1/√t and is given by C(0,t). Approximate measure of how far the dopant has diffused (the diffusion length) is given by x=2√Dt which is the distance from origin where the concentration has fallen by 1/e Carl Friedrich Gauss (1777-1855) Analytic solutions of the diffusion equations:Case of a spike delta function near the surface The symmetry of the problem is similar to previous case, with an effective dose of 2Q introduced into a (virtual) infinite medium. The solution is thus: Constant total dopant