官方说明书NEC micro;PD4481161, 4481181, 4481321, 4481361 Data Sheet.pdf

NEC PD4481161 4481181 4481321 4481361 Data Sheet /file/2594762 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2594762 查询UPD4481161GF-A65供应商查询UPD4481161GF-A65供应商 DATA SHEET MOS INTEGRATED CIRCUIT µ PD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µ PD4481161 is a 524,288-word by 16-bit, the µ PD4481181 is a 524,288-word by 18-bit, the µ PD4481321 is a 262,144-word by 32-bit and the µ PD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µ PD4481161, µ PD4481181, µ PD4481321 and µ PD4481361 are optimized to eliminate dead cycles for read to write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK). The µ PD4481161, µ PD4481181, µ PD4481321 and µ PD4481361 are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory. ZZ has to