官方说明书NEC NE661M04 数据手册.pdfVIP

NEC NE661M04 handbook /file/2721473 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2721473 查询NE661M04供应商 NPN SILICON HIGH NE661M04 FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS 2 21E I = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. DESCRIPTION M04 NECs NE661M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low cur- rent performance. NECs new low profile/flat lead style M04 package is ideal for todays portable wireless applications. The NE661M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE661M04