THE LIGHT EMITTING DIODE[发光二极管](PPT-51).pptVIP

GaAs GaP 1.90 eV GaAs GaP 2.00 eV GaAs GaP 2.26 eV _ + Energy Momentum Addition of a nitrogen recombination center to indirect GaAsP . Both As and P are group V elements. (Hence the nomenclature of the materials as III-V compound semiconductors.) We can replace some of the As with P in GaAs and make a mixed compound semiconductor GaAs1-xPx. When the mole fraction of phosphorous is less than about 0.45 the band gap is direct, and so we can engineer the desired color of LED that we want by simply growing a crystal with the proper phosphorus concentration! X CB Minimum Γ VB Maximum N Level Γ