笔记本内存产品与设计.ppt

* * Ramaxel Technology Limited 创新是发展的源泉! 笔记本内存产品与设计 “为客户提供一流的服务” ——Ramaxel Ramaxel Technology Limited 创新是发展的源泉! 台式机或服务器 长5.25” 用于笔记本或其他有尺寸要求的场合。长2.7” 。 功耗和散热要求高 Ramaxel Technology Limited 创新是发展的源泉! DDR SODIMM 配置结构 ECC support 1 72 X16 5 C Lowest density 1 64 X16 4 C Highest density 1 64 X8 8 B Highest density 2 64 X16 8 A Notes # Banks Bus Width Chip Org # DRAMs Raw Card Ramaxel Technology Limited 创新是发展的源泉! 主要特征 Organization x64, x72 Dimensions (nominal) 31.75mm X 67.60mm Pin Count 200 SDRAMs Support 64/128/256/512Mbit Capacity 32 ~ 512MByte Voltage Options 2.5V Vdd, Vddq 2.5V to 3.3V Vddspd Interface SSTL_2 Parameter Min Max Propagation delay : So [ps/in] (outer layers) 133 167 Propagation delay : So [ps/in] (inner layers) 167 183 Trace impedance : Zo [ohm] (all layers) 54 66 PCB Calculated Parameters Example 6 Layer PCB Stackup Ramaxel Technology Limited 创新是发展的源泉! PCB板的特征阻抗 Unbuffered SDRAM DIMM：70 +/- 10 Ohm Registered SDRAM DIMM： 65+/-6.5 Ohm SDRAM SO-DIMM : 55 +/-8 Ohm Unbuffered DDR DIMM： 60 +/-6 Ohm Registered DDR DIMM ： 60+/-6 Ohm DDR SO-DIMM： 60+/-6 Ohm Ramaxel Technology Limited 创新是发展的源泉! kPa 105 to 69 Barometric Pressure (operating storage) % 5 to 95 StorageHumidity (without condensation) HSTG ∞C 50 to +100 Storage Temperature TSTG % 10 to +90 Operating Humidity (relative) HOPR ∞C 0 to +65 Operating Temperature (ambient) TOPR Units Rating Parameter Symbol DDR SODIMM Absolute Maximum Ratings Ax, BAx, RAS, CAS, WE Address/Control CKE [1:0] Clock Enable S [1:0] Select DQ [63:0], CB[7:0], DM[8:0], DQS[8:0] Data, Check Bits, Data Mask, Data Strobe CK [2:0] Clocks for Unbuffered SO-DIMM Signals In Group Page Signal Group Signal Groups Ramaxel Technology Limited 创新是发展的源泉! DDR REG. DIMM 信号分类 CK, CK PLL Input / Unused Clocks Ax, BAx, RAS, CAS, WE Address/Control CKE [1:0] Clock Enable S [1:0] Select DQ [63:0], CB[7:0], DM[8:0], DQS[17:0] Data, Check Bits, Data Mask, Data Strobe PCK[9:0] PLL